Hydrogen Gas Sensing Characteristics of Nanostructured NiO Thin Films Synthesized by SILAR Method

被引：7

作者：

Karaduman, Irmak ^{[1
]}

Corlu, Tugba ^{[1
]}

Yildirim, M. Ali ^{[2
]}

Ates, Aytunc ^{[3
]}

Acar, Selim ^{[1
]}

机构：

[1] Gazi Univ, Fac Sci, Dept Phys, Ankara, Turkey

[2] Erzincan Univ, Fac Engn, Dept Elect & Elect Engn, Erzincan, Turkey

[3] Yildirim Beyazit Univ, Engn & Nat Sci Fac, Dept Mat Engn, Ankara, Turkey

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2017年 / 46卷 / 07期

关键词：

Gas sensors; NiO; hydrogen; SILAR; SENSOR; H-2;

D O I：

10.1007/s11664-017-5400-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanostructured NiO thin films have been synthesized by a facile, low-cost successive ionic layer adsorption and reaction (SILAR) method, and the effects of the film thickness on their hydrogen gas sensing properties investigated. The samples were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD) analysis, and energy-dispersive x-ray analysis. The XRD results revealed that the crystallinity improved with increasing thickness, exhibiting polycrystalline structure. SEM studies showed that all the films covered the glass substrate well. According to optical absorption measurements, the optical bandgap decreased with increasing film thickness. The gas sensing properties of the nanostructured NiO thin films were studied as a function of operating temperature and gas concentration. The samples showed good sensing performance of H-2 gas with high response. The maximum response was 75% at operating temperature of 200A degrees C for hydrogen gas concentration of 40 ppm. These results demonstrate that nanostructured NiO thin films synthesized by the SILAR method have potential for application in hydrogen detection.

引用

页码：4017 / 4023

页数：7