A CMOS-MEMS IR device based on double-layer thermocouples

被引:11
作者
Lei, Cheng [1 ,2 ]
Mao, Haiyang [2 ,3 ]
Ou, Wen [2 ,3 ]
Xue, Chenyang [1 ]
Tang, Licheng [1 ,2 ]
Yang, Tao [2 ,3 ]
Chen, Dapeng [2 ,3 ]
Xiong, Jijun [1 ]
机构
[1] North Univ China, Natl Key Lab Elect Measurement Technol, Taiyuan 030051, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Smart Sensing R&D Ctr, Beijing 100029, Peoples R China
[3] Jiangsu R&D Ctr Internet Things, Smart Sensor Engn Ctr, Wuxi 214135, Peoples R China
来源
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2016年 / 22卷 / 05期
基金
中国国家自然科学基金;
关键词
THERMOPILE;
D O I
10.1007/s00542-015-2688-z
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, a thermopile-based MEMS IR sensor is reported. In the device, a double-layer thermocouple strip structure and thermal-conductive-electrical-isolated structures are adopted thus to reduce the size and to improve performance of the whole device. After being packed into a TO-5 package, the sensor achieves a responsivity of 1151.14 V/W, a detectivity of 4.15 x 10(8) cm Hz(1/2)/W, and a response time of 14.46 ms. Besides, in measurements of varied temperatures and vacuum pressures, the thermopile proposed in this work could reach relatively high sensitivities. This indicates that such a device can also function as a temperature sensor and a vacuum sensor. In this way, the applications of thermopiles are broadened.
引用
收藏
页码:1163 / 1171
页数:9
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