Enhanced electrical insulation and ferroelectricity in La and Ni co-doped BiFeO3 thin films

被引:50
作者
Rajput, S. S. [1 ]
Katoch, R. [1 ]
Sahoo, K. K. [1 ]
Sharma, G. N. [4 ]
Singh, S. K. [4 ]
Gupta, R. [2 ,3 ]
Garg, A. [1 ]
机构
[1] Indian Inst Technol, Dept Mat Sci & Engn, Kanpur 208016, Uttar Pradesh, India
[2] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India
[3] Indian Inst Technol, Mat Sci Programme, Kanpur 208016, Uttar Pradesh, India
[4] Solid State Phys Lab, Funct Mat Div, Delhi 110054, India
关键词
Bismuth ferrite; Multiferroic; Ferroelectric polarization; Co-doping; MULTIFERROICS; POLARIZATION; TRANSITION; CRYSTAL;
D O I
10.1016/j.jallcom.2014.09.161
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this manuscript, we report the effect of co-doping of La and Ni in controlling the electrical leakage and enhancing the ferroelectric polarization in chemical solution processed BiFeO3 (BFO) thin films grown on Pt/Si substrates. Structural analysis of the films using X-ray diffraction shows that all the films are phase pure with perovskite structure and a R3c space group. The films are polycrystalline without evidence of any preferred orientation. Compared to the undoped BFO thin films, the leakage current in co-doped thin films is minimum at a La doping of 5 at% and Ni doping of 2.5 at% beyond which the leakage increases. While ferroelectric polarization does decrease marginally on co-doping, the shape of ferroelectric hysteresis loop improves in comparison to the undoped or singly doped films. The samples with La doping of 5 at% and Ni doping of 2.5 at% (Bi0.95La0.05Fe0.975Ni0.025O3) show a remnant polarization (P-r) of similar to 66 mu C/cm(2) and a coercive field of 0.3 MV/cm at room temperature. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:339 / 344
页数:6
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