In this manuscript, we report the effect of co-doping of La and Ni in controlling the electrical leakage and enhancing the ferroelectric polarization in chemical solution processed BiFeO3 (BFO) thin films grown on Pt/Si substrates. Structural analysis of the films using X-ray diffraction shows that all the films are phase pure with perovskite structure and a R3c space group. The films are polycrystalline without evidence of any preferred orientation. Compared to the undoped BFO thin films, the leakage current in co-doped thin films is minimum at a La doping of 5 at% and Ni doping of 2.5 at% beyond which the leakage increases. While ferroelectric polarization does decrease marginally on co-doping, the shape of ferroelectric hysteresis loop improves in comparison to the undoped or singly doped films. The samples with La doping of 5 at% and Ni doping of 2.5 at% (Bi0.95La0.05Fe0.975Ni0.025O3) show a remnant polarization (P-r) of similar to 66 mu C/cm(2) and a coercive field of 0.3 MV/cm at room temperature. (C) 2014 Elsevier B.V. All rights reserved.
机构:
Changwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South Korea
Kim, J. W.
;
Kim, S. S.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South Korea
Kim, S. S.
;
Kim, H. J.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South Korea
Kim, H. J.
;
Kim, W. J.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South Korea
Kim, W. J.
;
论文数: 引用数:
h-index:
机构:
Raghavan, C. M.
;
Do, D.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South Korea
Do, D.
;
Lee, M. H.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South Korea
Lee, M. H.
;
论文数: 引用数:
h-index:
机构:
Song, T. K.
;
Kim, M. H.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South Korea
机构:
Changwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South Korea
Kim, J. W.
;
Kim, S. S.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South Korea
Kim, S. S.
;
Kim, H. J.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South Korea
Kim, H. J.
;
Kim, W. J.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South Korea
Kim, W. J.
;
论文数: 引用数:
h-index:
机构:
Raghavan, C. M.
;
Do, D.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South Korea
Do, D.
;
Lee, M. H.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South Korea
Lee, M. H.
;
论文数: 引用数:
h-index:
机构:
Song, T. K.
;
Kim, M. H.
论文数: 0引用数: 0
h-index: 0
机构:
Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South KoreaChangwon Natl Univ, Dept Phys, Chang Won 641773, Gyeongnam, South Korea