Compact electro-optic modulator on silicon-on-insulator substrates using cavities with ultra-small modal volumes

被引：104
作者：
Schmidt, Bradley [1 ]
Xu, Qianfan [1 ]
Shakya, Jagat [1 ]
Manipatruni, Sasikanth [1 ]
Lipson, Michal [1 ]
机构：
[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
来源：
OPTICS EXPRESS | 2007年 / 15卷 / 06期
关键词：
D O I：
10.1364/OE.15.003140
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We experimentally demonstrate a micron-size electro-optic modulator using a high-index-contrast silicon Fabry-Perot resonator cavity. This compact device consists of a 1-D cavity formed within a single mode silicon channel waveguide and an embedded p-i-n junction on a silicon-on-insulator platform. The entire device is 6.0 microns in length. We demonstrate modulation depths as large as 5.87 dB at speeds of 250 Mbps limited only by fabrication imperfections, with optimized theoretical speeds of several Gbps. (c) 2007 Optical Society of America.
引用
收藏
页码：3140 / 3148
页数：9
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