Reduced leakage current and enhanced piezoelectricity of BNT-BT-BMO thin films

被引：25

作者：

Wu, Shuanghao ^{[1
]}

Song, Baijie ^{[1
]}

Li, Peng ^{[1
]}

Chen, Pan ^{[1
]}

Shen, Bo ^{[1
]}

Zhai, Jiwei ^{[1
]}

机构：

[1] Tongji Univ, Sch Mat Sci & Engn, Funct Mat Res Lab, Key Lab Adv Civil Engn Mat,Minist Educ, Shanghai 201804, Peoples R China

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2020年 / 103卷 / 02期

基金：

中国国家自然科学基金;

关键词：

BNT-BKT-BMO thin films; leakage current; metal organic decomposition; piezoelectricity; ELECTRICAL-PROPERTIES; DIELECTRIC-PROPERTIES; FERROELECTRIC PROPERTIES; PHASE-STRUCTURE; DEPENDENCE; STRAIN; CERAMICS; BEHAVIOR; BI;

D O I：

10.1111/jace.16825

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

BiMeO3 (where Me denotes a transition metal) is often used as a chemical modifier to form the Bi0.5Na0.5TiO3-based solid solutions and to improve the electromechanical properties of the materials. In this study, BiMnO3 was selected as a chemical modifier, and (1 - x)(0.94Bi(0.5)Na(0.5)TiO(3)-0.06BaTiO(3))-xBiMnO(3) thin films with x = 0, 0.005, 0.01, and 0.015 were fabricated using the metal organic decomposition method to study the contributions of the third end-member BiMnO3 to the reduction in the leakage current and the enhancement of the piezoelectric properties of Bi0.5Na0.5TiO3-BaTiO3 thin films. Thin films with 1 mol% BiMnO3 exhibit a lower leakage current, and a better piezoelectricity and ferroelectricity, whose S-max/E-max, P-max, 2E(c), and epsilon(r) are 100.4 pm/V, 48.0 mu C/cm(2), 54.9 kV/cm, and 942, respectively.

引用

页码：1219 / 1229

页数：11

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