Electronic structure of multiwall boron nitride nanotubes

被引:104
作者
Fuentes, GG
Borowiak-Palen, E
Pichler, T
Liu, X
Graff, A
Behr, G
Kalenczuk, RJ
Knupfer, M
Fink, J
机构
[1] Leibniz Inst Solid State & Mat Res Dresden, D-01171 Dresden, Germany
[2] Tech Univ Szczecin, Inst Chem & Environm Engn, Szczecin, Poland
[3] Univ Vienna, Inst Mat Phys, A-1090 Vienna, Austria
关键词
D O I
10.1103/PhysRevB.67.035429
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on electron energy-loss spectroscopy studies of the electronic properties of multiwall boron nitride nanotubes, in terms of the B1s and N1s excitation edges and of the q-dependent energy-loss function. The q-dependent dielectric function shows a strong dispersion in momentum of the pi and sigma+pi plasmons indicating that they are spatially delocalized along the tube axis as expected according to their characteristic two-dimensional graphiticlike structure, and nondispersing excitations at 11 and 12 eV. The dielectric function epsilon of the boron nitride nanotubes reveals an intense pi-pi* interband transition at 5.4 eV, which is shifted to lower energies by 0.6 eV when compared to hexagonal BN in good agreement with recent theoretical band-structure calculations of boron nitride nanotubes.
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页数:6
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