Structuring of membrane sensors using sacrificial porous silicon

被引：42

作者：

Hedrich, F ^{[1
]}

Billat, S ^{[1
]}

Lang, W ^{[1
]}

机构：

[1] Inst Micromachining & Informat Technol, Hahn Schickard Gesell, D-78052 Villingen Schwenningen, Germany

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2000年 / 84卷 / 03期

关键词：

porous silicon; membrane sensors; thermal applications; sacrificial layer;

D O I：

10.1016/S0924-4247(00)00308-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents porous silicon as a tool for the construction of thermal transducers, reviews advantages of this technology and discusses a surface micromachining process, which produces a large gap between membrane and underlying substrate, using porous silicon as a sacrificial layer. The technology itself and the various etching process stoppage techniques are described as well as the difficulties encountered in porous silicon etching underneath sensor membranes and presentation of solution. Finally, design layout rules for thermal sensor applications using porous silicon technology are defined and discussed. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：315 / 323

页数：9

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