Carrier transport in InP-based lasers, modulators, and optical switching devices

被引：0

作者：

Hangleiter, A ^{[1
]}

Geiger, M ^{[1
]}

Knorr, C ^{[1
]}

Konig, P ^{[1
]}

Ottenwalder, D ^{[1
]}

Riedl, T ^{[1
]}

Scholz, F ^{[1
]}

Zimmermann, M ^{[1
]}

Hillmer, H ^{[1
]}

Steinhagen, F ^{[1
]}

Burkhard, H ^{[1
]}

机构：

[1] DEUTSCH TELEKOM,FORSCH & TECHNOL ZENTRUM,D-64276 DARMSTADT,GERMANY

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1997年 / 204卷 / 01期

关键词：

D O I：

10.1002/1521-3951(199711)204:1<570::AID-PSSB570>3.0.CO;2-V

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Carrier transport effects of various kinds provide an important performance limitation to InP-based semiconductor lasers, modulators, and optical switching devices. We demonstrate how thermally activated tunneling dominates the hole transport in InGaAs/InGaAsP/InP optical switching structures. For InGaAs/InGaAlAs quantum well lasers, we show that a carrier culture time into the quantum wells of about 1.5 ps severely Limits the modulation performance.

引用

页码：570 / 573

页数：4

共 7 条

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