Growth of high-quality ErBa2Cu3O7-δ thin films

被引:11
作者
Ohazama, T
Mukaida, M
Ichinose, A
Matsumoto, K
Yoshida, Y
Horii, S
Saito, A
Ohshima, S
机构
[1] Yamagata Univ, Fac Engn, Yamagata 9928510, Japan
[2] Cent Res Inst Elect Power Ind, Tokyo 2018511, Japan
[3] Kyoto Univ, Sakyo Ku, Kyoto, Japan
[4] Nagoya Univ, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[5] Univ Tokyo, Bunkyo Ku, Tokyo 1338656, Japan
[6] Japan Sci & Technol Agcy, Kawaguchi, Saitama 320012, Japan
来源
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2004年 / 412卷
关键词
ErBa2Cu3O7-delta; PLD; thin film;
D O I
10.1016/j.physc.2004.02.226
中图分类号
O59 [应用物理学];
学科分类号
摘要
ErBa2Cu3O7-delta thin films are grown by pulsed laser deposition (PLD). Using a SrTiO3 as a lattice matched substrate. In the film growth, the substrate temperature is varied from 720 to 780 degreesC. From X-ray diffraction (XRD) patterns, only the 00/ reflections from the ErBa2Cu3O7-delta films are observed. The average of the c-axis length of the other films is 11.6875 Angstrom. ErBa2Cu3O7-delta film grown at 735 degreesC is excellent in the crystallinity, while the intensity of 0 0 1 peaks of the film grown at more than 780 degreesC obviously weakened. The zero resistance T-c is 90.5 K. Superconducting transition width is 1.5 K. Large and flat grains are observed by atomic force microscopy (AFM) at the surface of the film. From the scanning electron microscope (SEM) image, we confirmed some grains with the size of approximately 200 nm in diameter on the ErBa2Cu3O7-delta thin film. We observe the interface of ErBa2Cu3O7-delta, and substrate clearly by transmission electron microscopy (TEM) measurements. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:1301 / 1305
页数:5
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