Photoresistance of Si/Ge/Si structures with germanium quantum dots

被引：11
|
作者：
Shegai, OA [1 ]
Zhuravlev, KS [1 ]
Markov, VA [1 ]
Nikiforov, AI [1 ]
Pchelyakov, OP [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia
来源：
SEMICONDUCTORS | 2000年 / 34卷 / 11期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1325429
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An exponential decrease in the resistance of a Si/Ge/Si structure containing germanium quantum dots with an increase in the band-to-band optical excitation intensity is observed at 4.2 K. Two different exponential regions in the dependence of structure resistance on the optical excitation intensity are observed in elastically strained structures, but only one such region is observed in unstrained structures. The experimental results obtained are explained within the model of the hopping conduction of nonequilibrium electrons, which are localized at and between quantum dots in the strained structures, but are localized only between quantum dots in the unstrained structures. (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码：1311 / 1315
页数：5
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