A 21.5-50 GHz Low Noise Amplifier in 0.15-μm GaAs pHEMT Process for Radio Astronomical Receiver System

被引：14

作者：

Chen, Yu-Min ^{[1
,2
]}

Wang, Yunshan ^{[1
,2
]}

Chiong, Chau-Ching ^{[3
]}

Wang, Huei ^{[1
,2
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei, Taiwan

[2] Natl Taiwan Univ, Grad Inst Commun Engn, Taipei, Taiwan

[3] Acad Sinica, Inst Astron & Astrophys, Taipei, Taiwan

来源：

2021 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2021年

关键词：

low noise amplifier (LNA); broadband amplifier; GaAs pHEMT; MMIC; radio astronomy;

D O I：

10.1109/APMC52720.2021.9661949

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully-integrated Q-band low noise amplifier (LNA) for radio astronomical receiver system is implemented in 0.15-ttm GaAs pseudomorphic high electron-mobility transistor (pHEMT) process. In order to extend the gain bandwidth, the R-C feedback technique is applied to make the impedance point closer to achieve the goal. The fabricated amplifier consumes 36mW with a chip area of 2.5x1 mm(2). This LNA achieves a 22.5-dB peak small-signal gain with 6-dB bandwidth from 21.5 to 50 GHz. The measured noise figure is 3 to 4.5 dB within the effective bandwidth. The figure-of-merit (FOM) of this design is 7.5 GHz/mW, which has the potential of the earlier reported Q-band GaAs LNAs.

引用

页码：7 / 9

页数：3

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