Solution-processed hybrid organic-inorganic complementary thin-film transistor inverter

被引:11
作者
Cheong, Heajeong [1 ]
Kuribara, Kazunori [1 ]
Ogura, Shintaro [1 ]
Fukuda, Nobuko [1 ]
Yoshida, Manabu [1 ]
Ushijima, Hirobumi [1 ]
Uemura, Sei [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan
关键词
OXIDE SEMICONDUCTORS; LOW-TEMPERATURE; FABRICATION;
D O I
10.7567/JJAP.55.04EL04
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated hybrid organic-inorganic complementary inverters with a solution-processed indium-gallium-zinc-oxide (IGZO) n-channel thin-film transistor (TFT) and p-channel TFTs using the high-uniformity polymer poly[2,5-bis(alkyl)pyrrolo[3,4-c]pyrrolo-1,4(2H,5H)-dione-alt-5,5-di(thiophene-2-yl)-2,2-(E)-2-(2-(thiophen-2-yl) vinyl) thiophene] (PDVT-10). The IGZO TFT was fabricated at 150 degrees C for 1 min. It showed a high field-effect mobility of 0.9cm(2).V-1.s(-1) and a high on/off current ratio of 10(7). A hybrid complementary inverter was fabricated by combining IGZO with a PDVT-10 thin-film transistor and its operation was confirmed. (C) 2016 The Japan Society of Applied Physics
引用
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页数:3
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