Solution-processed hybrid organic-inorganic complementary thin-film transistor inverter

被引：11

作者：

Cheong, Heajeong ^{[1
]}

Kuribara, Kazunori ^{[1
]}

Ogura, Shintaro ^{[1
]}

Fukuda, Nobuko ^{[1
]}

Yoshida, Manabu ^{[1
]}

Ushijima, Hirobumi ^{[1
]}

Uemura, Sei ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 04期

关键词：

OXIDE SEMICONDUCTORS; LOW-TEMPERATURE; FABRICATION;

D O I：

10.7567/JJAP.55.04EL04

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated hybrid organic-inorganic complementary inverters with a solution-processed indium-gallium-zinc-oxide (IGZO) n-channel thin-film transistor (TFT) and p-channel TFTs using the high-uniformity polymer poly[2,5-bis(alkyl)pyrrolo[3,4-c]pyrrolo-1,4(2H,5H)-dione-alt-5,5-di(thiophene-2-yl)-2,2-(E)-2-(2-(thiophen-2-yl) vinyl) thiophene] (PDVT-10). The IGZO TFT was fabricated at 150 degrees C for 1 min. It showed a high field-effect mobility of 0.9cm(2).V-1.s(-1) and a high on/off current ratio of 10(7). A hybrid complementary inverter was fabricated by combining IGZO with a PDVT-10 thin-film transistor and its operation was confirmed. (C) 2016 The Japan Society of Applied Physics

引用

页数：3

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