Boron(III)-Containing Donor-Acceptor Compound with Goldlike Reflective Behavior for Organic Resistive Memory Devices

被引:91
作者
Poon, Chun-Ting [1 ,2 ]
Wu, Di [1 ,2 ]
Yam, Vivian Wing-Wah [1 ,2 ]
机构
[1] Univ Hong Kong, Inst Mol Funct Mat, Area Excellence Scheme, Univ Grants Comm Hong Kong, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China
[2] Univ Hong Kong, Dept Chem, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China
关键词
boron; donor-acceptor systems; optical reflector; molecular devices; thin films; INFRARED PHOTOCHROMIC BEHAVIOR; LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; HIGH-PERFORMANCE; PHOTONIC CRYSTALS; SOLAR-CELLS; BORON(III) CENTER; POLYMERS; LUMINESCENCE; FLUORESCENCE;
D O I
10.1002/anie.201510946
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A small-molecule-based boron(III)-containing donor-acceptor compound has been designed and synthesized. Interesting goldlike reflective behavior was observed in the neat thin-film sample from simple spin-coating preparation, which can serve as a potential organic thin-film optical reflector. The small thickness in nanometer range and the relatively smooth surface morphology, together with simple preparation and easy solution processability, are attractive features for opening up new avenues for the fabrication of reflective coatings. Moreover, this donor-acceptor compound has been employed in the fabrication of organic resistive memory device, which exhibited good performance with low turn-on voltage, small operating bias, large ON/OFF ratio, and long retention time.
引用
收藏
页码:3647 / 3651
页数:5
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