Metal silicide-mediated microcrystalline silicon thin-film growth for photovoltaics

被引：21

作者：

Kim, Joondong

Anderson, Wayne A. ^{[1
]}

机构：

[1] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

[2] Korea Inst Machinery & Mat, Nanomech Syst Res Ctr, Taejon 305343, South Korea

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2007年 / 91卷 / 06期

基金：

美国国家科学基金会;

关键词：

metal silicide; epitaxial crystalline; Si film; photovoltaics;

D O I：

10.1016/j.solmat.2006.11.009

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Microcrystalline thin Si films were grown by the metal-induced growth method. The metal catalyst (Co, Ni, or Co-coated Ni) first reacted to sputtered Si forming a silicide layer. Then a Si film was epitaxially grown above the silicide seed template. The crystallinity of Si films was investigated by X-ray diffraction (XRD) confirming Si film growth with CoSi2 or NiSi2 as an intermediate step. The grown Si films were fabricated into Schottky photodiodes. The Co-coated Ni modulated the silicide formation and gave a short-circuit current density (J(sc)) of 10.6mA/cm(2), which is one order higher than that for the single Cc catalyst case. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：534 / 538

页数：5

共 18 条

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