A scalable GaN HEMT large-signal model for high-efficiency RF power amplifier design

被引：30

作者：

Xu, Yuehang ^{[1
]}

Fu, Wenli ^{[2
]}

Wang, Changsi ^{[1
]}

Ren, Chunjiang ^{[3
]}

Lu, Haiyan ^{[3
]}

Zheng, Weibin ^{[4
]}

Yu, Xuming ^{[4
]}

Yan, Bo ^{[1
]}

Xu, Ruimin ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Fundamental Sci EHF Lab, Chengdu 611731, Peoples R China

[2] China Acad Space Technol Xian, Natl Key Lab Sci & Technol Space Microwave, Xian 710100, Peoples R China

[3] Sci & Technol Monolith Integrated Circuits & Modu, Nanjing 210016, Jiangsu, Peoples R China

[4] Nanjing Elect Devices Inst, Nanjing 210016, Jiangsu, Peoples R China

来源：

JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS | 2014年 / 28卷 / 15期

基金：

中国国家自然科学基金;

关键词：

scalable model; power amplifier; large-signal empirical model; GaN HEMT; ALGAN/GAN HEMTS;

D O I：

10.1080/09205071.2014.947440

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a large-signal empirical model for GaN HEMT devices using an improved Angelov drain current formulation with self-heating effect and a modified non-linear capacitance model. The established model for small gate-width GaN HEMTs is validated by on-wafer load-pull measurements up to 14GHz. Moreover, a scalable large-signal model is presented by adding scalable parameters to drain-source current and non-linear capacitance equations. The scalable model of a 1.25mm GaN HEMT has been employed to design a class-AB power amplifier for validation purposes. The results show that good agreement has been achieved between the simulated and measured results with 37.2 dBm saturation output power (P-sat) and 58% maximum power-added-efficiency at 3GHz.

引用

页码：1888 / 1895

页数：8

共 50 条

[1] Design of a High-efficiency GaN HEMT RF Power Amplifier
Wang, Yelin
Larsen, Torben
2015 INTERNATIONAL SYMPOSIUM ON SIGNALS, CIRCUITS AND SYSTEMS (ISSCS), 2015,
[2] A Verilog-A Large-Signal GaN HEMT Model for High Power Amplifier Design
Kharabi, F.
McMacken, J. R. F.
Gering, J. M.
2010 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), 2010,
[3] Extraction of Accurate GaN HEMT Model for High-Efficiency Power Amplifier Design
Vadalal, Valeria
Raffo, Antonio
Avolio, Gustavo
Marchetti, Mauro
Schreurs, Dominique M. M. -P
Vannini, Giorgio
2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2015,
[4] Design of a High Efficiency GaN-HEMT RF Power Amplifier
Gaddam, Nagavenkat K.
da Silva, Jose Machado
2015 CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS), 2015,
[5] Nonlinear Electrothermal GaN HEMT Model Applied to High-Efficiency Power Amplifier Design
King, Justin B.
Brazil, Thomas J.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2013, 61 (01) : 444 - 454
[6] A large-signal model of self-aligned gate GaAsFETs for high-efficiency power amplifier design
Hirose, M
Kitaura, Y
Uchitomi, N
1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 1999, : 513 - 516
[7] A Compact Large-Signal Model Generation of GaN HEMT for RF Circuit Design Implication
Anand, Anupama
Reeta
Narang, Rakhi
Rawal, Dipendra Singh
Mishra, Meena
Saxena, Manoj
Gupta, Mridula
2023 IEEE WIRELESS ANTENNA AND MICROWAVE SYMPOSIUM, WAMS, 2023,
[8] Enhanced GaN HEMT Large-Signal Model With Self-Heating and Trapping Effects for Power Amplifier Design
Khan, Mehdi
Qian, Weiqiang
Huang, Dong
Li, Lei
Lin, Fujiang
2015 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP), 2015, : 281 - 283
[9] Design of broadband, high-efficiency, and high-linearity GaN HEMT class-J RF power amplifier
Mohadeskasaei S.A.
Lin F.
Zhou X.
Abdullahi S.U.
Ahmat A.
Mohadeskasaei, Seyed A. (alireza.kasaee@gmail.com), 1600, Electromagnetics Academy (72): : 177 - 186
[10] Automatic large-signal GaAs HEMT modeling for power amplifier design
Popov, Artyom
Bilevich, Dmitry
Salnikov, Andrei
Dobush, Igor
Goryainov, Aleksandr
Kalentyev, Alexey
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2019, 100 : 138 - 143

← 1 2 3 4 5 →