The dynamics of electromagnetic solitons near a semiconductor superlattice discontinuity

被引：0

作者：

Zav'yalov, DV ^{[1
]}

Kaplya, EV ^{[1
]}

Kryuchkov, SV ^{[1
]}

机构：

[1] Volgograd State Univ, Volgograd 400013, Russia

来源：

LASER PHYSICS | 2004年 / 14卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The process of electromagnetic soliton propagation along the layers of a semiconductor superlattice containing transverse layers with an increased concentration of charge carriers is considered. Special features of soliton interaction in the vicinity of the discontinuity interface are studied. The threshold carrier concentration required for the interacting solitons to pass through the layer is found to differ substantially from that needed in the case of single soliton passing. This phenomenon should be taken into account when designing soliton filters and other devices employing solitons.

引用

页码：1310 / 1313

页数：4

共 10 条

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Kryuchkov, SV
Kaplya, EV
[J]. TECHNICAL PHYSICS, 2003, 48 (05) : 576 - 579
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[10] Superlattice conductivity under the action of a nonlinear electromagnetic wave
Zav'yalov, DV
Kryuchkov, SV
[J]. SEMICONDUCTORS, 2001, 35 (05) : 554 - 556

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