Band structure and electrical properties of Gd-doped HfO2 high k gate dielectric

被引：69

作者：

Xiong, Yuhua ^{[1
]}

Tu, Hailing ^{[1
]}

Du, Jun ^{[1
]}

Ji, Mei ^{[1
]}

Zhang, Xinqiang ^{[1
]}

Wang, Lei ^{[1
]}

机构：

[1] Gen Res Inst NonFerrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 01期

基金：

中国国家自然科学基金;

关键词：

capacitance; conduction bands; current density; doping; energy gap; gadolinium; hafnium compounds; high-k dielectric thin films; leakage currents; noncrystalline structure; permittivity; RARE-EARTH-OXIDE; ELECTRONIC-STRUCTURE; THIN-FILMS; TRANSISTORS;

D O I：

10.1063/1.3460277

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of Gd doping on band gap, band offset, oxygen vacancies, and electrical properties of amorphous HfO2 film have been studied. The results show that Gd incorporation helps increase band gap, conduction band offset and conduction band minimum, and reduce oxygen vacancies simultaneously. Kept at the same physical thickness of 5 nm, Gd-doped HfO2 gate dielectric has a leakage current density of 9.0x10(-4) A/cm(2) at 1 V gate voltage, one and a half orders of magnitude lower than that of the pure HfO2. Gd doping also enhances the dielectric constant. The capacitance equivalent thicknesses of 0.98 nm and 0.81 nm for HfO2 and Gd-doped HfO2 films, respectively, have been obtained. (C) 2010 American Institute of Physics. [doi:10.1063/1.3460277]

引用

页数：3

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