Electroluminescence from Solution Grown n-ZnO Nanorod/p-GaN-Heterostructured Light Emitting Diodes

被引：20

作者：

Dalui, Saikat ^{[1
]}

Lin, Chih-Chien ^{[1
]}

Lee, Hsin-Ying ^{[2
]}

Yen, Shiu-Fang ^{[3
]}

Lee, Yao-Jung ^{[3
]}

Lee, Ching-Ting ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Electroopt Engn, Tainan 701, Taiwan

[3] Ind Technol Res Inst, Microsyst Technol Ctr, Tainan, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 05期

关键词：

crystal growth from solution; crystal microstructure; electroluminescence; electroluminescent devices; gallium compounds; III-V semiconductors; light emitting diodes; MOCVD; nanofabrication; nanorods; photoluminescence; semiconductor growth; stoichiometry; wide band gap semiconductors; zinc compounds; ZINC-OXIDE; ROOM-TEMPERATURE; FILMS; HETEROJUNCTIONS; ARRAY;

D O I：

10.1149/1.3352985

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

To fabricate n-ZnO nanorod/p-GaN-heterostructured light emitting diodes, well-aligned ZnO nanorod arrays were synthesized on metallorganic chemical vapor deposited p-GaN layers on sapphire substrates using low temperature and low cost solution growth techniques. Current-voltage measurements showed the formation of a diode structure with a typical diode characteristic having a turn-on voltage of 4.8 V. Microstructure and room-temperature photoluminescence measurements confirmed the growth of ZnO nanorod arrays with a near-perfect microstructure, stoichiometry, and excellent optical quality. Room-temperature electroluminescence in the blue-violet region with a peak wavelength of similar to 398 nm was observed under a forward bias. No defect-related emission was observed in the deep visible region.

引用

页码：H516 / H518

页数：3

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