Effects of intermediate energy heavy-ion irradiation on the microstructure of rutile TiO2 single crystal
被引:15
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作者:
Smith, Kassiopeia A.
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机构:
Boise State Univ, Micron Sch Mat Sci & Engn, Boise, ID 83725 USABoise State Univ, Micron Sch Mat Sci & Engn, Boise, ID 83725 USA
Smith, Kassiopeia A.
[1
]
Savva, Andreas I.
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机构:
Boise State Univ, Micron Sch Mat Sci & Engn, Boise, ID 83725 USABoise State Univ, Micron Sch Mat Sci & Engn, Boise, ID 83725 USA
Savva, Andreas I.
[1
]
Wu, Yaqiao
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机构:
Boise State Univ, Micron Sch Mat Sci & Engn, Boise, ID 83725 USA
Ctr Adv Energy Studies, 995 Univ Blvd, Idaho Falls, ID USABoise State Univ, Micron Sch Mat Sci & Engn, Boise, ID 83725 USA
Wu, Yaqiao
[1
,2
]
Tenne, Dmitri A.
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机构:
Boise State Univ, Dept Phys, Boise, ID 83725 USABoise State Univ, Micron Sch Mat Sci & Engn, Boise, ID 83725 USA
Tenne, Dmitri A.
[3
]
Butt, Darryl P.
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机构:
Univ Utah, Coll Mines & Earth Sci, Salt Lake City, UT USABoise State Univ, Micron Sch Mat Sci & Engn, Boise, ID 83725 USA
Butt, Darryl P.
[4
]
Xiong, Hui
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机构:
Boise State Univ, Micron Sch Mat Sci & Engn, Boise, ID 83725 USABoise State Univ, Micron Sch Mat Sci & Engn, Boise, ID 83725 USA
Xiong, Hui
[1
]
Wharry, Janelle P.
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机构:
Purdue Univ, Sch Nucl Engn, W Lafayette, IN 47907 USABoise State Univ, Micron Sch Mat Sci & Engn, Boise, ID 83725 USA
Wharry, Janelle P.
[5
]
机构:
[1] Boise State Univ, Micron Sch Mat Sci & Engn, Boise, ID 83725 USA
[2] Ctr Adv Energy Studies, 995 Univ Blvd, Idaho Falls, ID USA
[3] Boise State Univ, Dept Phys, Boise, ID 83725 USA
[4] Univ Utah, Coll Mines & Earth Sci, Salt Lake City, UT USA
[5] Purdue Univ, Sch Nucl Engn, W Lafayette, IN 47907 USA
dislocation loops;
high-resolution transmission electron microscope;
ion irradiation;
titanium dioxide;
RADIATION-DAMAGE;
THIN-FILMS;
RAMAN-SPECTRA;
ELECTRICAL-CONDUCTIVITY;
TEXTURE EVOLUTION;
SURFACE;
IMPLANTATION;
ANATASE;
ORIENTATION;
D O I:
10.1111/jace.15576
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
This study reports the microstructure evolution of single crystal rutile TiO2 under 3MeV Nb+ ion irradiation, with the irradiating ions incident on the {100} plane. A complex, multi-layered microstructure evolution is observed with 4 distinct regions: (i) short-range disorder in the first 60nm below the specimen surface, (ii) dislocation loops oriented parallel to the incident ion beam direction, located along the increasing slope of the irradiation damage profile at 60-650nm from the surface, (iii) loops oriented perpendicular to the incident ion beam direction, at depths encompassing the ion implantation and irradiation damage peaks 650-1250nm, and (iv) a high density of nano-scale atomic rearrangements with long-range order, located at depths 1250-1750nm. These results present evidence that multiple defect mechanisms occur during irradiation including ion channeling, nuclear stopping, and electronic stopping interactions as a function of depth and disorder accumulation.
机构:
Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
Zhai, Pengfei
Nan, Shuai
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机构:
Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Chinese Acad Sci, CAS Ctr Excellence Tibetan Plateau Earth Sci, Beijing 100101, Peoples R China
Chinese Acad Sci, Key Lab Continental Collis & Plateau Uplift, Inst Tibetan Plateau Res, Beijing 100101, Peoples R ChinaChinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
Nan, Shuai
Xu, Lijun
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机构:
Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
Xu, Lijun
Li, Weixing
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h-index: 0
机构:
Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Chinese Acad Sci, CAS Ctr Excellence Tibetan Plateau Earth Sci, Beijing 100101, Peoples R China
Chinese Acad Sci, Key Lab Continental Collis & Plateau Uplift, Inst Tibetan Plateau Res, Beijing 100101, Peoples R ChinaChinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
Li, Weixing
Li, Zongzhen
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h-index: 0
机构:
Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
Li, Zongzhen
Hu, Peipei
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机构:
Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
Hu, Peipei
Zeng, Jian
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机构:
Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
Zeng, Jian
Zhang, Shengxia
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机构:
Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R ChinaChinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
Zhang, Shengxia
Sun, Youmei
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机构:
Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
Sun, Youmei
Liu, Jie
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机构:
Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China