Recent advances on physico-chemical characterization of passive films by EIS and differential admittance techniques

被引：9
作者：
Di Quarto, F. [1 ]
La Mantia, F. [1 ]
Santamaria, M. [1 ]
机构：
[1] Univ Palermo, Dipartimento Ingn Chim Proc & Mat, I-90128 Palermo, Italy
来源：
CORROSION SCIENCE | 2007年 / 49卷 / 01期
关键词：
passive film; a-SC schottky barrier; EIS spectra;
D O I：
10.1016/j.corsci.2006.05.019
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin Nb2O5 anodic films (similar to 20 nm thick) grown in phosphoric acid solution have been characterised by EIS and differential admittance study in a large range of potential and frequency. The overall electrical behaviour has been interpreted by means of the theory of amorphous semiconductor Schottky barrier in presence of a non-constant density of states (DOS). A comparison of DOS for films grown in different electrolytes is reported. (c) 2006 Elsevier Ltd. All rights reserved.
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收藏
页码：186 / 194
页数：9
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