Deposition of MSe (M = Cd, Zn) films by LP-MOCVD from novel single-source precursors M[(SePPh2)2N]2

被引：0
|
作者：
Afzaal, M
Aucott, SM
Crouch, D
O'Brien, P
Woollins, JD
Park, JH
机构：
[1] Univ Manchester, Dept Chem, Manchester Mat Sci Ctr, Manchester M13 9PL, Lancs, England
[2] Univ St Andrews, Sch Chem, St Andrews KY16 9ST, Fife, Scotland
来源：
CHEMICAL VAPOR DEPOSITION | 2002年 / 8卷 / 05期
关键词：
D O I：
10.1002/1521-3862(20020903)8:5<187::AID-CVDE187>3.0.CO;2-5
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The deposition of MSe (M= Cd, Zn) films by low pressure chemical vapor deposition from air stable single-source precursors, was analyzed. The thermogravimetric analysis of cadmium and zinc showed that the precursors were volatile and began to evaporate at 375°C. It was found using gas chromatography and mass spectrometry experiments that the use of methyl(n-hexyl) derivatives instead of symmetric alkyl hindered the formation of diethyldiselenide. The observed color of Zinc selenide films produced at 525°C was dark orange and the film was transparent.
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页码：187 / 189
页数：3
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