Study on the influence of γ-ray total dose radiation effect on the electrical properties of the uniaxial strained Si nanometer NMOSFET

被引：6

作者：

Hao, Minru ^{[1
]}

Hu, Huiyong ^{[1
]}

Wang, Bin ^{[1
]}

Liao, Chenguang ^{[1
]}

Kang, Haiyan ^{[1
]}

Su, Han ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Device, Xian 710071, Shaaxi, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2017年 / 133卷

基金：

中国国家自然科学基金;

关键词：

Uniaxial strained Si; Nanometer; NMOSFET; Total dose; Electrical characteristics; IRRADIATION; THICKNESS;

D O I：

10.1016/j.sse.2017.04.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The carrier microscopic transport process of uniaxial strained Si n-channel metal-oxide semiconductor field-effect transistor (NMOSFET) has been analyzed under gamma-ray radiation. The variation of electrical characteristics of the uniaxial strained Si nanometer NMOSFET has also been investigated under the total dose radiation. The Capacitor-Voltage (C-V) and Current-Voltage (I-V) characteristics are measured at room temperature before and after irradiation for each sample. The results indicate that the drift of threshold voltage, the degradation of carrier mobility and the increase in leakage current because of the total dose radiation effect. Moreover, a two-dimensional analytical model of threshold voltage (V-th) and carrier mobility model have been developed due to the total dose irradiation taken into consideration. Based on the model, numerical simulation has been carried out by MATLAB. The influence of the total dose, geometry and physics parameters on threshold voltage was simulated. Moreover, to evaluate the validity of the model, the simulation results were compared with experimental data, and good agreements were confirmed. Thus, the experiment results and proposed model provide good reference for research on irradiation reliability and application of strained integrated circuit of uniaxial strained Si nanometer n-channel metal-oxide semiconductor field-effect transistor. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：45 / 52

页数：8

共 22 条

[1] Proton Irradiation Enhancement of Low-Field Negative Magnetoresistance Sensitivity of AlGaN/GaN-Based Magnetic Sensor at Cryogenic Temperature [J].

Abderrahmane, Abdelkader ;

Ko, Pil Ju ;

Okada, Hiroshi ;

Sato, Shin-Ichiro ;

Ohshima, Takeshi ;

Sandhu, Adarsh .

IEEE ELECTRON DEVICE LETTERS, 2014, 35 (11) :1130-1132

[2]

Amit Chaudhry, 2013, SOLID STATE ELECT, V79, P133

[3] Radiation emission at channeling of electrons in a strained layer Si1-xGex undulator crystal [J].

Backe, H. ;

Krambrich, D. ;

Lauth, W. ;

Andersen, K. K. ;

Hansen, J. Lundsgaard ;

Uggerhoj, Ulrik I. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 309 :37-44

[4] Total-ionizing-dose effects on isolation oxides in modern CMOS technologies [J].

Barnaby, Hugh J. ;

Mclain, Michael ;

Esqueda, Ivan Sanchez .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 261 (1-2) :1142-1145

[5]

Bordallo CCM, 2013, 14 EUR C P EUR C RAD, P1

[6] Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies [J].

Esqueda, I. Sanchez ;

Barnaby, H. J. ;

King, M. P. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (04) :1501-1515

[7]

Frank Stern, 1972, PHYS REV B, V5, P4891

[8] Comparative Analysis of Mechanical Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation [J].

Gaillardin, M. ;

Raine, M. ;

Duhamel, O. ;

Girard, S. ;

Paillet, P. ;

McMorrow, D. ;

Warner, J. H. ;

Andrieu, F. ;

Barraud, S. ;

Faynot, O. ;

Roche, N. J-H. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61 (04) :1628-1634

[9]

Hiroshi K., 1994, J NUCL SCI TECHNOL, V31, P24, DOI [10.3327/jnst.31.24, DOI 10.3327/JNST.31.24]

[10] The influence of channel length on total ionizing dose effect in deep submicron technologies [J].

Hu Zhi-Yuan ;

Liu Zhang-Li ;

Shao Hua ;

Zhang Zheng-Xuan ;

Ning Bing-Xu ;

Bi Da-Wei ;

Chen Ming ;

Zou Shi-Chang .

ACTA PHYSICA SINICA, 2012, 61 (05)

← 1 2 3 →