Whispering gallery mode lasing from InGaN/GaN quantum well microtube

被引：18

作者：

Li, Yufeng ^{[1
,2
,3
]}

Feng, Lungang ^{[1
,2
,3
]}

Su, Xilin ^{[1
,2
,3
]}

Li, Qiang ^{[1
,2
,3
]}

Yun, Feng ^{[1
,2
,3
]}

Yuan, Ge ^{[4
]}

Han, Jung ^{[4
]}

机构：

[1] Xi An Jiao Tong Univ, Key Lab Phys Elect & Devices, Minist Educ, Xian 710049, Peoples R China

[2] Xi An Jiao Tong Univ, Shaanxi Prov Key Lab Photon & Informat Technol, Xian 710049, Peoples R China

[3] Xi An Jiao Tong Univ, Solid State Lighting Engn Res Ctr, Xian 710049, Peoples R China

[4] Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA

来源：

OPTICS EXPRESS | 2017年 / 25卷 / 15期

基金：

中国国家自然科学基金;

关键词：

OPTICAL MICROCAVITIES; SPONTANEOUS-EMISSION; ROOM-TEMPERATURE; RING RESONATORS; LASER-DIODES; MICRODISKS; THRESHOLD; ARRAYS; VOLUME;

D O I：

10.1364/OE.25.018072

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this work, we have successfully fabricated microtubes by strain-induced self-rolling of a InGaN/GaN quantum wells nanomembrane. Freestanding quantum wells microtubes, with a diameter of 6 mu m and wall thickness of 50 nm, are formed when the coherently strained InGaN/GaN quantum wells heterostructure is selectively released from the hosting substrate. Periodic oscillations due to whispering-gallery modes resonance were found superimposed on photoluminescence spectra even at low optical excitation power. With increasing pumping power density, the microtube is characterized by a stimulated emission with a threshold as low as 415 kW/cm(2). Such emission shows predominant TM polarization parallel to the microtube axis. (C) 2017 Optical Society of America

引用

页码：18072 / 18080

页数：9

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