Whispering gallery mode lasing from InGaN/GaN quantum well microtube

被引：18
|
作者：
Li, Yufeng [1 ,2 ,3 ]
Feng, Lungang [1 ,2 ,3 ]
Su, Xilin [1 ,2 ,3 ]
Li, Qiang [1 ,2 ,3 ]
Yun, Feng [1 ,2 ,3 ]
Yuan, Ge [4 ]
Han, Jung [4 ]
机构：
[1] Xi An Jiao Tong Univ, Key Lab Phys Elect & Devices, Minist Educ, Xian 710049, Peoples R China
[2] Xi An Jiao Tong Univ, Shaanxi Prov Key Lab Photon & Informat Technol, Xian 710049, Peoples R China
[3] Xi An Jiao Tong Univ, Solid State Lighting Engn Res Ctr, Xian 710049, Peoples R China
[4] Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA
来源：
OPTICS EXPRESS | 2017年 / 25卷 / 15期
基金：
中国国家自然科学基金;
关键词：
OPTICAL MICROCAVITIES; SPONTANEOUS-EMISSION; ROOM-TEMPERATURE; RING RESONATORS; LASER-DIODES; MICRODISKS; THRESHOLD; ARRAYS; VOLUME;
D O I：
10.1364/OE.25.018072
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this work, we have successfully fabricated microtubes by strain-induced self-rolling of a InGaN/GaN quantum wells nanomembrane. Freestanding quantum wells microtubes, with a diameter of 6 mu m and wall thickness of 50 nm, are formed when the coherently strained InGaN/GaN quantum wells heterostructure is selectively released from the hosting substrate. Periodic oscillations due to whispering-gallery modes resonance were found superimposed on photoluminescence spectra even at low optical excitation power. With increasing pumping power density, the microtube is characterized by a stimulated emission with a threshold as low as 415 kW/cm(2). Such emission shows predominant TM polarization parallel to the microtube axis. (C) 2017 Optical Society of America
引用
收藏
页码：18072 / 18080
页数：9
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