Anharmonicity in light scattering by optical phonons in GaAs1-xBix

被引：9

作者：

Joshya, R. S. ^{[1
]}

Rajaji, V. ^{[2
]}

Narayana, Chandrabhas ^{[2
]}

Mascarenhas, A. ^{[3
]}

Kini, R. N. ^{[1
]}

机构：

[1] Indian Inst Sci Educ & Res Thiruvananthapuram IIS, CET Campus, Thiruvananthapuram 695016, Kerala, India

[2] JNCASR, Bangalore 560064, Karnataka, India

[3] NREL, 1617 Cole Blvd, Golden, CO 80401 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 119卷 / 20期

关键词：

BAND-GAP; GAASBI ALLOYS; RAMAN; NITROGEN; BI; SEMICONDUCTORS; SPECTROSCOPY; TEMPERATURE; DEPENDENCE; ABSORPTION;

D O I：

10.1063/1.4952381

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a Raman spectroscopic study of GaAs1-xBix epilayers grown by molecular beam epitaxy. We have investigated the anharmonic effect on the GaAs-like longitudinal optical phonon mode (LOGaAs') of GaAs1-xBix for different Bi concentrations at various temperatures. The results are analyzed in terms of the anharmonic damping effect induced by thermal and compositional disorder. We have observed that the anharmonicity increases with Bi concentration in GaAs1-xBix as evident from the increase in the anharmonicity constants. In addition, the anharmonic lifetime of the optical phonon decreases with increasing Bi concentration in GaAs1-xBix. Published by AIP Publishing.

引用

页数：5

共 39 条

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