Barrier effects in SiGe HBT: Modeling of high-injection base current increase

被引：3

作者：

Fregonese, S ^{[1
]}

Zimmer, T ^{[1
]}

Maneux, C ^{[1
]}

Sulima, PY ^{[1
]}

机构：

[1] Univ Bordeaux 1, IXL, CNRS, UMR 5818,ENSEIRB, F-33405 Talence, France

来源：

PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2004年

关键词：

D O I：

10.1109/BIPOL.2004.1365756

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The HBT's parasitic energy band barrier formation located at the hetero-interface was investigated. Physical simulations show that additional base current increase in the high-injection regime is associated with the parasitic barrier formation. The charge calculation related to parasitic barrier allows us to derive a model for the base current increase which is implemented into an electrical scalable compact model and applied on measurements.

引用

页码：104 / 107

页数：4

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