Oxygen solubilities in Si melts: The influence of carbon addition

被引：3
作者：
Abe, K
Terashima, K
Matsumoto, T
Maeda, S
Nakanishi, H
Hoshikawa, K
机构：
[1] Shonan Inst Technol, Silicon Melt Adv Project, Kanagawa 251, Japan
[2] Shinshu Univ, Fac Educ, Nagano 380, Japan
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1998年 / 145卷 / 01期
关键词：
D O I：
10.1149/1.1838252
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We investigated the influence of carbon addition on oxygen solubilities in silicon melts. Oxygen concentration increases with increasing carbon concentration in silicon melts when melt temperatures are above 1470 degrees C. The temperature dependence of oxygen concentration in carbon-doped silicon melts is strong when carbon concentration is above 5.0 x 10(17) atoms/cm(3). It is found that 87% of the oxygen atoms are related to carbon in carbon-doped silicon melts when carbon concentration is 3.0 x 10(18) atoms/cm(3) and silicon melt temperature is 1500 degrees C.
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页码：319 / 322
页数：4
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