Deuterium-induced degradation of (Ba, Sr)TiO3 films

被引：37
作者：
Ahn, JH
McIntyre, PC [1 ]
Mirkarimi, LW
Gilbert, SR
Amano, J
Schulberg, M
机构：
[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[2] Agilent Labs, Palo Alto, CA 94304 USA
[3] Novellus Syst, San Jose, CA 95134 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 09期
关键词：
D O I：
10.1063/1.1290139
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electrical degradation of (Ba, Sr)TiO3 (BST) thin films was investigated by annealing Pt/BST/Pt structures in D-2/N-2 and D2O-containing furnace ambients. Deuterium depth profiles were correlated to the current-voltage characteristics of the BST thin films. The dependence of the D distribution and leakage current density on the D incorporation method indicates that mobile, donor-type deuterium defects dissolve in large concentrations within BST thin films, and that their effects on leakage properties depend on the nature of their charge compensation. A mechanism is proposed for the leakage current increase after D-2/N-2 anneals, and good quantitative agreement between the theoretical results and experimental data is demonstrated. (C) 2000 American Institute of Physics. [S0003-6951(00)03335-0].
引用
收藏
页码：1378 / 1380
页数：3
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