Deuterium-induced degradation of (Ba, Sr)TiO3 films

被引：37

作者：

Ahn, JH

McIntyre, PC ^{[1
]}

Mirkarimi, LW

Gilbert, SR

Amano, J

Schulberg, M

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Agilent Labs, Palo Alto, CA 94304 USA

[3] Novellus Syst, San Jose, CA 95134 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 09期

关键词：

D O I：

10.1063/1.1290139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical degradation of (Ba, Sr)TiO3 (BST) thin films was investigated by annealing Pt/BST/Pt structures in D-2/N-2 and D2O-containing furnace ambients. Deuterium depth profiles were correlated to the current-voltage characteristics of the BST thin films. The dependence of the D distribution and leakage current density on the D incorporation method indicates that mobile, donor-type deuterium defects dissolve in large concentrations within BST thin films, and that their effects on leakage properties depend on the nature of their charge compensation. A mechanism is proposed for the leakage current increase after D-2/N-2 anneals, and good quantitative agreement between the theoretical results and experimental data is demonstrated. (C) 2000 American Institute of Physics. [S0003-6951(00)03335-0].

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页码：1378 / 1380

页数：3

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