Observation of orientation- and k-dependent Zeeman spin-splitting in hole quantum wires on (100)-oriented AlGaAs/GaAs heterostructures

被引:35
作者
Chen, J. C. H. [1 ]
Klochan, O. [1 ]
Micolich, A. P. [1 ]
Hamilton, A. R. [1 ]
Martin, T. P. [1 ]
Ho, L. H. [1 ]
Zulicke, U. [2 ,3 ]
Reuter, D. [4 ]
Wieck, A. D. [4 ]
机构
[1] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia
[2] Massey Univ, Inst Fundamental Sci, Palmerston North 4442, New Zealand
[3] Massey Univ, MacDiarmid Inst Adv Mat & Nanotechnol, Palmerston North 4442, New Zealand
[4] Ruhr Univ Bochum, D-44780 Bochum, Germany
基金
澳大利亚研究理事会;
关键词
SPINTRONICS; ELECTRON;
D O I
10.1088/1367-2630/12/3/033043
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this paper, We study the Zeeman spin-splitting in hole quantum wires oriented along the [011] and [01 (1) over bar] crystallographic axes of a high mobility undoped (100)-oriented AlGaAs/GaAs heterostructure. Our data show that the spin-splitting can be switched 'on' (finite g*) or 'off' (zero g*) by rotating the field from a parallel to a perpendicular orientation with respect to the wire, and the properties of the wire are identical for the two orientations with respect to the crystallographic axes. We also find that the g-factor in the parallel orientation decreases as the wire is narrowed. This is in contrast to electron quantum wires, where the g-factor is enhanced by exchange effects as the wire is narrowed. This is evidence for a k-dependent Zeeman splitting that arises from the spin-3/2 nature of holes.
引用
收藏
页数:11
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