Transmission electron microscopy investigation of tin sub-oxide nucleation upon SnO2 deposition on silicon

被引：27
作者：
Alfonso, C
Charai, A
Armigliato, A
Narducci, D
机构：
[1] UNIV AIX MARSEILLE 3,FAC SCI & TECH ST JEROME,MET LAB,URA 443,MARSEILLE 20,FRANCE
[2] CNR,LAMEL,I-40129 BOLOGNA,ITALY
[3] UNIV MILAN,INFM,DEPT PHYS CHEM & ELECTROCHEM,I-20133 MILAN,ITALY
来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 09期
关键词：
D O I：
10.1063/1.115970
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Transmission electron microscopy analysis of tin dioxide films grown by aerosol-assisted chemical vapor deposition onto oxidized or etched silicon displayed the formation of a sub-oxide phase that was identified as Sn2O3. Such a phase is observed to disappear upon heat treatment, and is believed to be one of the factors responsible for the instability of tin dioxide films used as gas sensing layers. (C) 1996 American Institute of Physics.
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页码：1207 / 1208
页数：2
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