Total current collapse in High-Voltage GaN MIS-HEMTs induced by Zener trapping

被引：18

作者：

Jin, D. ^{[1
]}

Joh, J. ^{[2
]}

Krishnan, S. ^{[2
]}

Tipirneni, N. ^{[2
]}

Pendharkar, S. ^{[2
]}

del Alamo, J. A. ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

[2] Texas Inst, Dallas, TX 75243 USA

来源：

2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2013年

关键词：

D O I：

10.1109/IEDM.2013.6724572

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate current collapse in GaN MIS-HEMTs for >600 V operation. Extreme trapping leading to total current collapse has been observed after OFF-state stress at high voltage. We attribute this to high-field tunneling-induced electron trapping ("Zener trapping") inside the AlGaN barrier or the GaN channel layers. The trapping takes place in a narrow region right under the edge of the outermost field plate in the drain portion of the device. The trapping characteristics are consistent with those responsible for the yellow luminescence band in GaN or AlGaN. This finding gives urgency to defect control during epitaxial-growth and the design of appropriate field plate structures for the reliable high-voltage operation of MIS-HEMTs.

引用

页数：4

共 8 条

[1] Yellow luminescence and related deep states in undoped GaN [J].