A W-band Constructive Wave Oscillator in 130-nm SiGe BiCMOS

被引：0

作者：

Ariyak, Goker ^{[1
]}

Kirkman-Bey, Monique ^{[1
]}

Dogan, Numan S. ^{[1
]}

Xie, Zhijian ^{[1
]}

Ketel, Mohammed ^{[2
]}

机构：

[1] North Carolina A&T Technol State Univ, Elect & Comp Engn Dept, Greensboro, NC 27401 USA

[2] Univ Baltimore, Appl Informat Technol, Baltimore, MD 21201 USA

来源：

SOUTHEASTCON 2017 | 2017年

关键词：

BiCMOS; SiGe; constructive wave oscillator; CWO; millimeter-wave; Terahertz traveling wave; frequency generation;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

In this paper we present a deterministic W-band constructive-wave oscillator (CWO) designed and simulated in 130-nm SiGe BiCMOS. A six-section CWO produces 95 GHz multi-phase oscillation signals that are distributed along the ring with 60 degree phases. The CWO circuit occupies a total area of 0.59 mm x 0.53 mm and dissipates 67 mW from a 2V supply. The six-phase CWO operating at 95 GHz has -10 dBm output power into 50 ohm load with a phase noise of -81 dBc per Hz at 1 MHz offset.

引用

页数：5

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