1.3-1.4 μm photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates

被引：4

作者：

Egorov, VA

Cirlin, GE

Polyakov, NK

Petrov, VN

Tonkikh, AA

Volovik, BV

Musikhin, YG

Zhukov, AE

Tsatsul'nikov, AF

Ustinov, VM

机构：

[1] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 198103, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg, Russia

来源：

NANOTECHNOLOGY | 2000年 / 11卷 / 04期

关键词：

D O I：

10.1088/0957-4484/11/4/326

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Optical and structural properties of multilayer structures with InAs/GaAs quantum dots are investigated. It is shown that under optimal growth conditions, 1.3-1.4 mum emission can be achieved. Possible scenarios of quantum dot behaviour evaluation are discussed in a frame of elastic theory to explain differences in optical properties of the grown structures.

引用

页码：323 / 326

页数：4

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