共 10 条
Effect of oxidation treatment on the structure and composition of oxide film on Al-Mg-Sc alloy surface and microstructure of Al substrate near interface
被引:3
作者:

Wu, Mingjin
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Cent South Univ, Light Alloy Res Inst, Changsha 410083, Peoples R China Cent South Univ, Light Alloy Res Inst, Changsha 410083, Peoples R China

Wu, Feifei
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Cent South Univ, Light Alloy Res Inst, Changsha 410083, Peoples R China Cent South Univ, Light Alloy Res Inst, Changsha 410083, Peoples R China

Long, Mengjun
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Cent South Univ, Sch Mat Sci & Engn, Changsha 410083, Peoples R China Cent South Univ, Light Alloy Res Inst, Changsha 410083, Peoples R China

Ye, Pengcheng
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Cent South Univ, Sch Mat Sci & Engn, Changsha 410083, Peoples R China Cent South Univ, Light Alloy Res Inst, Changsha 410083, Peoples R China

Jiang, Feng
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Cent South Univ, Light Alloy Res Inst, Changsha 410083, Peoples R China
Cent South Univ, Sch Mat Sci & Engn, Changsha 410083, Peoples R China Cent South Univ, Light Alloy Res Inst, Changsha 410083, Peoples R China

Jiang, Jingyu
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Cent South Univ, Sch Met & Environm, Changsha 410083, Peoples R China Cent South Univ, Light Alloy Res Inst, Changsha 410083, Peoples R China
机构:
[1] Cent South Univ, Light Alloy Res Inst, Changsha 410083, Peoples R China
[2] Cent South Univ, Sch Mat Sci & Engn, Changsha 410083, Peoples R China
[3] Cent South Univ, Sch Met & Environm, Changsha 410083, Peoples R China
关键词:
Metals and alloys;
Oxidation;
Microstructure;
D O I:
10.1016/j.matlet.2022.132819
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The oxidation behavior of Al-Mg-Sc alloy at 200 degrees C was investigated. The structure and composition of oxide film on Al-Mg-Sc alloy surface were analyzed by XRD and ARXPS. The microstructure evolution of Al substrate near the interface between Al-Mg-Sc alloy and oxide film was explored by EBSD and TEM. The experimental results indicated that after oxidation treatment at 200 degrees C, the oxide film was mainly composed of MgO, Al2O3 and a small amount of MgAl2O4. MgAl2O4 was mainly distributed at the bottom of the oxide film and the formation of MgAl2O4 was followed by formation of MgO. Meanwhile, the grains rotated, and part of the LAGBs were transformed into HAGBs with many poorly matched atoms. Mg atoms could quickly diffuse to the grain boundary and the surface through dislocation channels to participate in the oxidation reaction, which favoured the formation of MgAl2O4 at the interface.
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