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Improved photoelectric performance of DSSCs based on TiO2 nanorod array/Ni-doped TiO2 compact layer composites film
被引:11
作者:
Deng, Yafeng
[1
]
Ma, Zhanhong
[1
,2
]
Ren, Fengzhang
[1
,2
]
Wang, Guangxin
[1
,3
]
机构:
[1] Henan Univ Sci & Technol, Sch Mat Sci & Engn, Luoyang 471023, Peoples R China
[2] Henan Collaborat Innovat Ctr Nonferrous Gener Tec, Luoyang 471023, Peoples R China
[3] Henan Key Lab Nonferrous Mat Sci & Proc Technol, Luoyang 471023, Peoples R China
关键词:
Ni-doped TiO2 compact layer;
TiO2 nanorod array film;
Photoelectric performance;
PCE stability with time;
SENSITIZED SOLAR-CELLS;
BLOCKING LAYERS;
PHOTOVOLTAIC PERFORMANCE;
EFFICIENT;
GROWTH;
OPTIMIZATION;
DEPOSITION;
PRECURSOR;
D O I:
10.1007/s10008-019-04399-y
中图分类号:
O646 [电化学、电解、磁化学];
学科分类号:
081704 ;
摘要:
In spite of the TiO2 compact layer (TCL) being widely used, it still needs more study. This paper took Ni-doped TCLs as the research target, using an innovative two-step method perfectly prepared Ni-doped TCLs with different thicknesses. And then on the basis of Ni-doped TCLs, the TiO2 nanorod array (TNA) films were successfully prepared. The effects of Ni-doped TCLs with different thicknesses on the morphology, structure, and photoelectric performance of TNA films were investigated. The results indicated that Ni-doped TCLs with appropriate thickness can significantly improve performance of TNA films and obtain satisfactory PCE stability with time. Compared with the TNA films based on Ni:TCL5, Ni:TCL10, and Ni:TCL30, the TNA film with Ni:TCL20 exhibited better comprehensive photoelectric performance, the DSSCs based on this TNA film achieved the highest J(sc) (10.191 mA cm(-2)), V-oc (0.574 V), PCE (4.42%), and the most excellent PCE stability with time.
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页码:3031 / 3041
页数:11
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