Improved photoelectric performance of DSSCs based on TiO2 nanorod array/Ni-doped TiO2 compact layer composites film

被引:11
作者
Deng, Yafeng [1 ]
Ma, Zhanhong [1 ,2 ]
Ren, Fengzhang [1 ,2 ]
Wang, Guangxin [1 ,3 ]
机构
[1] Henan Univ Sci & Technol, Sch Mat Sci & Engn, Luoyang 471023, Peoples R China
[2] Henan Collaborat Innovat Ctr Nonferrous Gener Tec, Luoyang 471023, Peoples R China
[3] Henan Key Lab Nonferrous Mat Sci & Proc Technol, Luoyang 471023, Peoples R China
关键词
Ni-doped TiO2 compact layer; TiO2 nanorod array film; Photoelectric performance; PCE stability with time; SENSITIZED SOLAR-CELLS; BLOCKING LAYERS; PHOTOVOLTAIC PERFORMANCE; EFFICIENT; GROWTH; OPTIMIZATION; DEPOSITION; PRECURSOR;
D O I
10.1007/s10008-019-04399-y
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
In spite of the TiO2 compact layer (TCL) being widely used, it still needs more study. This paper took Ni-doped TCLs as the research target, using an innovative two-step method perfectly prepared Ni-doped TCLs with different thicknesses. And then on the basis of Ni-doped TCLs, the TiO2 nanorod array (TNA) films were successfully prepared. The effects of Ni-doped TCLs with different thicknesses on the morphology, structure, and photoelectric performance of TNA films were investigated. The results indicated that Ni-doped TCLs with appropriate thickness can significantly improve performance of TNA films and obtain satisfactory PCE stability with time. Compared with the TNA films based on Ni:TCL5, Ni:TCL10, and Ni:TCL30, the TNA film with Ni:TCL20 exhibited better comprehensive photoelectric performance, the DSSCs based on this TNA film achieved the highest J(sc) (10.191 mA cm(-2)), V-oc (0.574 V), PCE (4.42%), and the most excellent PCE stability with time.
引用
收藏
页码:3031 / 3041
页数:11
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