Studies of electron trapping in GaN doped with carbon

被引：7

作者：

Lopatiuk, Olena

Chernyak, Leonid ^{[1
]}

Feldman, Yishai

Gartsman, Konstantin

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[2] Weizmann Inst Sci, IL-76100 Rehovot, Israel

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 10期

关键词：

nitrides; semiconductors; luminescence; scanning electron microscopy; INJECTION;

D O I：

10.1016/j.tsf.2006.07.102

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Irradiation by the beam of the scanning electron microscope is shown to induce a systematic decay of the cathodoluminescence intensity in gallium nitride semiconductor doped with carbon. This decay is accompanied by increased electronic carrier diffusion length, indicating that electron irradiation results in the increase of carrier lifetime. Temperature-dependent cathodoluminescence measurements yielded activation energy for irradiation-induced effect of 210 meV. This observation is consistent with trapping of non-equilibrium electrons on deep, non-ionized carbon levels. (c) 2006 Elsevier B.V. All rights reserved.

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收藏

页码：4365 / 4368

页数：4

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