Biexciton formation in CdxZn1-xSe/ZnSe quantum-dot and quantum-well structures

被引：24

作者：

Herz, K ^{[1
]}

Kummell, T ^{[1
]}

Bacher, G ^{[1
]}

Forchel, A ^{[1
]}

Jobst, B ^{[1
]}

Hommel, D ^{[1
]}

Landwehr, G ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.56.15261

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dimensionality dependence of the biexciton formation process is investigated by comparing (Cd,Zn)Se/ZnSe quantum-dot and quantum-well structures using time-resolved photoluminescence (PL) spectroscopy. Modeling the onset of the biexciton PL signal with a system of rate equations, we obtain a biexciton formation coefficient of about 4 x 10(-10) cm(2)/ps for 35-nm quantum dots and of 0.2 x 10(-10) cm(2)/ps for the quantum-well reference, respectively, indicating a distinct enhancement of the biexciton formation efficiency in quantum dots. By analyzing the spectral line shape of the PL signal, an increase of the biexciton binding energy from 6.4 meV in the case of the quantum-well reference, to 11.3 meV for the quantum dots. is determined.

引用

页码：15261 / 15263

页数：3

共 18 条

[1] Relaxation of hot excitons in inhomogeneously broadened CdxZn1-xSe/ZnSe nanostructures [J].