Excitation mechanism of er photoluminescence in bulk Si and SiO2 with nanocrystals

被引:0
|
作者
Yassievich, IN [1 ]
Moskalenko, AS [1 ]
Gusev, OB [1 ]
Bresler, MS [1 ]
机构
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源
关键词
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:421 / 428
页数:8
相关论文
共 50 条
  • [31] A combined approach to greatly enhancing the photoluminescence of Si nanocrystals embedded in SiO2
    Xie, Zhi-qiang
    Chen, Dan
    Li, Zheng-hao
    Zhao, You-yuan
    Lu, Ming
    NANOTECHNOLOGY, 2007, 18 (11)
  • [32] Effect of annealing and H-2 passivation on the photoluminescence of Si nanocrystals in SiO2
    Neufeld, E
    Wang, S
    Apetz, R
    Buchal, C
    Carius, R
    White, CW
    Thomas, DK
    THIN SOLID FILMS, 1997, 294 (1-2) : 238 - 241
  • [33] 1.54 mu m photoluminescence of Er3+ doped into SiO2 films containing Si nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+
    Fujii, M
    Yoshida, M
    Kanzawa, Y
    Hayashi, S
    Yamamoto, K
    APPLIED PHYSICS LETTERS, 1997, 71 (09) : 1198 - 1200
  • [34] On the origin of photoluminescence enhancement of Si nanocrystals on silica glass template and Si/SiO2 superlattice
    Tuan, N. T.
    Thu, V. V.
    Trung, D. Q.
    Tu, N.
    Tran, M. T.
    Duong, P. H.
    Anh, T. X.
    Hong, N. T.
    Loan, P. K.
    Tam, T. T. H.
    Huy, P. T.
    PHYSICA B-CONDENSED MATTER, 2023, 662
  • [35] Hydrogen passivation of er and si nanocrystallites in Er-doped SiO2 -: Increase in photoluminescence
    Fukata, N
    Li, C
    Uematsu, H
    Arai, T
    Makimura, T
    Murakami, K
    Group-IV Semiconductor Nanostructures, 2005, 832 : 379 - 384
  • [36] Energy transfer in Er-doped SiO2 sensitized with si nanocrystals
    Izeddin, I.
    Timmerman, D.
    Gregorkiewicz, T.
    Moskalenko, A. S.
    Prokofiev, A. A.
    Yassievich, I. N.
    Fujii, M.
    PHYSICAL REVIEW B, 2008, 78 (03)
  • [37] Nanoindentation of si nanocrystals in SiO2
    Pok, W
    Bradby, J
    Elliman, R
    COMMAD 04: 2004 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 2005, : 335 - 337
  • [38] Effect of hydrogen passivation on luminescence-center-mediated Er excitation in Si-rich SiO2 with and without Si nanocrystals
    Savchyn, Oleksandr
    Kik, Pieter G.
    Todi, Ravi M.
    Coffey, Kevin R.
    PHYSICAL REVIEW B, 2008, 77 (20):
  • [39] Hot-carrier-mediated impact excitation of Er3+ ions in SiO2 sensitized by Si Nanocrystals
    Lesage, A.
    Timmerman, D.
    Lebrun, D. M.
    Fujiwara, Y.
    Gregorkiewicz, T.
    APPLIED PHYSICS LETTERS, 2018, 113 (03)
  • [40] Mechanism and enhancement of photoluminescence from silicon nanocrystals implanted in SiO2 matrix
    吴志永
    刘克新
    任晓堂
    Chinese Physics B, 2010, (09) : 621 - 625