A Compact Ka-Band GaAs pHEMT MMIC Notch Filtering Power Amplifier

被引:1
作者
Jiang, Yun Long [1 ]
Fan, Yong [1 ]
机构
[1] Univ Elect Sci & Technol China UESTC, EHF Key Lab Fundamental Sci, Sch Elect Sci & Engn, Chengdu, Peoples R China
来源
2019 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT 2019) | 2019年
关键词
Ka-band; GaAs; pHEMT; power amplifier; matching filtering technique; CO-DESIGN;
D O I
10.1109/icmmt45702.2019.8992891
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a compact Ka-band power amplifier (PA) with good bandstop responses from the matching network is designed for satellite communications. Compared with the conventional PA, it can suppress the undesired signal and meanwhile ensure the low loss and good performance. For demonstration, a 0.15 mu m GaAs pseudomorphic high electron mobility (pHEMT) two-stage PA based on the matching filtering technique is implemented, which exhibits the small-signal gain of 15.5 dB in the Ka-band and the suppression greater than 55 dB in the K-band, the output saturation power (P-sat) of 21 dBm and the power-added efficiency of 35% at P-sat.
引用
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页数:3
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