Growth and properties of single-phase γ-In2Se3 thin films on (111) Si substrate by AP-MOCVD using H2Se precursor

被引：17
作者：
Lyu, D. Y.
Lin, T. Y.
Lin, J. H.
Tseng, S. C.
Hwang, J. S.
Chiang, H. P.
Chiang, C. C.
Lan, S. M.
机构：
[1] Natl Taiwan Ocean Univ, Inst Optoelect Sci, Chilung 20224, Taiwan
[2] Inst Nucl Energy Res, Lungtan 32500, Taiwan
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2007年 / 91卷 / 10期
关键词：
InSe; MOCVD; photoluminescence;
D O I：
10.1016/j.solmat.2007.02.002
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A set of In2Se3 films was grown on (111) Si substrate with AIN buffer by metalorganic chemical vapor deposition (MOCVD) using H2Se as the metalogramic precursors for Se. The In2Se3 films on (111) Si substrate were pinhole-free with homogeneous and lamellar structures. It was found that by properly controlling the substrate temperatures, single-phase gamma-In2Se3 films with fairly good optical properties can be well fabricated. Photoluminescence spectra, of single-phase gamma-In2Se3 show exciton emissions at 2.140 eV at 10 K. The band gap of single-phase gamma-In2Se3 at room temperature is estimated at 1.943 eV. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：888 / 891
页数：4
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