Bandwidth enhancement of injection-locked distributed reflector lasers with wirelike active regions

被引：16

作者：

Lee, SeungHun ^{[1
,2
]}

Parekh, Devang ^{[3
]}

Shindo, Takahiko ^{[1
,2
]}

Yang, Weijian ^{[3
]}

Guo, Peng ^{[3
]}

Takahashi, Daisuke ^{[1
,2
]}

Nishiyama, Nobuhiko ^{[1
]}

Chang-Hasnain, Connie J. ^{[3
]}

Arai, Shigehisa ^{[1
,2
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan

[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 16期

基金：

日本学术振兴会;

关键词：

SURFACE-EMITTING LASER; BH-DFB LASERS; LOW-THRESHOLD; SEMICONDUCTOR-LASERS; FEEDBACK LASERS; OPERATION; INP; PERFORMANCE; MOCVD;

D O I：

10.1364/OE.18.016370

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The modulation bandwidth enhancement of distributed reflector (DR) lasers with wirelike active regions utilizing optical injection locking is demonstrated both theoretically and experimentally. By the rate equation analysis, it is shown that DR lasers with wirelike active regions realize a low optical injection power and a large bandwidth enhancement under small operation currents. Experimentally, the small-signal bandwidth is increased to >15 GHz at a bias current of 5 mA, which is 4 times smaller than that for conventional edge-emitting lasers. A large signal modulation at 10 Gbps is also performed at the same bias current of 5 mA and voltage swing of 0.4 V-pp, and error-free detection was confirmed under the low-power conditions. (C) 2010 Optical Society of America

引用

页码：16370 / 16378

页数：9

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