Structure and transport properties of rapidly quenched Ge-doped Bi0.85Sb0.15 foils

被引：0

作者：

Grechannikov, EE ^{[1
]}

Shepelevich, VG ^{[1
]}

机构：

[1] Belarusian State Univ, Minsk 220080, BELARUS

来源：

INORGANIC MATERIALS | 2000年 / 36卷 / 11期

关键词：

Hole Concentration; Hall Coefficient; Inverse Pole Figure; Pole Density; Substitutional Solid Solution;

D O I：

10.1007/BF02758918

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ge-doped Bi0.85Sb0.15 foils (0.2, 0.4, and 0.8 at. % Ge) prepared by quenching from the liquid state feature a strong (10(1) over bar 2) texture, correlating with the orientation of covalent bonds in the structure of the alloy. Electrical measurements demonstrate that the Ge dopant in Bi0.85Sb0.15 acts as an acceptor.

引用

页码：1081 / 1082

页数：2