Void formation during thermal decomposition of ultrathin oxide layers on the Si(110) surface

被引：11

作者：

Fujita, K ^{[1
]}

Watanabe, H ^{[1
]}

Ichikawa, M ^{[1
]}

机构：

[1] Angstrom Technol Partnership, Joint Res Ctr Atom Technol, Ibaraki, Osaka 305, Japan

来源：

SURFACE SCIENCE | 1998年 / 398卷 / 1-2期

关键词：

faceting; growth; scanning tunneling microscopy; silicon; silicon oxide;

D O I：

10.1016/S0039-6028(98)80018-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Void formation during thermal decomposition of a thin oxide layer on the Si(110) surface was investigated using high-temperature scanning tunneling microscopy, In the initial stage, oxide layer edges neighbored void perimeters, and (17 15 1) and (17 15 3) facets appeared in void surfaces, The facet orientation changed from (17 15 1) to (17 15 3) and from (17 15 3) to (17 15 1) as the voids extended. During oxide decomposition, the (110) surface appeared on void bottoms and around the voids, and only the (17 15 1) facet remained on the void sides. Si crystals were grown in the voids by selective epitaxial growth. (C) 1998 Elsevier Science B.V.

引用

页码：134 / 142

页数：9

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