Microstructure and optical properties of ZnO:Al films prepared by radio frequency reactive magnetron sputtering

被引：45

作者：

Chen, H. X. ^{[1
]}

Ding, J. J. ^{[1
]}

Zhao, X. G. ^{[2
]}

Ma, S. Y. ^{[1
]}

机构：

[1] NW Normal Univ, Coll Phys & Elect Engn, Lanzhou 730070, Gansu, Peoples R China

[2] Dingxi Normal Coll, Dept Phys, Dingxi 743000, Gansu, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2010年 / 405卷 / 05期

基金：

中国国家自然科学基金;

关键词：

ZnO thin films; RF magnetron sputtering; X-ray diffraction; Optical properties; PULSED-LASER DEPOSITION; THIN-FILMS; PHOTOLUMINESCENCE; GROWTH; SAPPHIRE; DEFECTS;

D O I：

10.1016/j.physb.2009.11.085

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Pure and Al-doped ZnO (ZnO:Al) films have been deposited using radio frequency (RF) reactive magnetron sputtering at the O-2:Ar ratio of 10:10, 6:10, and 2:10sccm and 150 degrees C. The substrate temperatures were room temperature (RT), 150, 250, and 350 degrees C and the O-2:Ar ratio was 6:10sccm during the magnetron sputtering. The microstructures and optical properties in doped ZnO films were systematically investigated by X-ray diffraction (XRD) and fluorescence spectrophotometry. The results indicate that ZnO:Al films prepared at 250 degrees C and 6:10sccm had the best crystal quality among all ZnO:Al films. Photoluminescence (PC) measurements at room temperature reveal a green and two blue emissions. The origin of these emissions is discussed. In addition, the intensity of blue emission peak first increased and then decreased as the substrate temperature shifted from RT to 350 degrees C. The most intense blue luminescence was obtained from a sample grown at the O-2:Ar ratio of 6:10sccm and 150 degrees C. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.

引用

页码：1339 / 1344

页数：6

共 28 条

[1] Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J].

Chen, YF ;

Bagnall, DM ;

Koh, HJ ;

Park, KT ;

Hiraga, K ;

Zhu, ZQ ;

Yao, T .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3912-3918

[2]

Cullity B. D., 1978, ELEMENTS XRAY DIFFRA

[3] Influence of Al-doping on the structure and optical properties of ZnO films [J].

Ding, J. J. ;

Ma, S. Y. ;

Chen, H. X. ;

Shi, X. F. ;

Zhou, T. T. ;

Mao, L. M. .

PHYSICA B-CONDENSED MATTER, 2009, 404 (16) :2439-2443

[4] Structural and optical properties of indium oxide thin films prepared by an ultrasonic spray CVD process [J].

Girtan, M ;

Folcher, G .

SURFACE & COATINGS TECHNOLOGY, 2003, 172 (2-3) :242-250

[5]

GONZALEZ AEJ, 1997, J SOLID STATE CHEM, V128, P176

[6] Band gap engineering of ZnO thin films by In2O3 incorporation [J].

Gupta, R. K. ;

Ghosh, K. ;

Patel, R. ;

Mishra, S. R. ;

Kahol, P. K. .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (12) :3019-3023

[7] Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films [J].

Hong, RJ ;

Qi, HJ ;

Huang, JB ;

He, GB ;

Fan, ZX ;

Shao, JA .

THIN SOLID FILMS, 2005, 473 (01) :58-62

[8] Violet and UV luminescence emitted from ZnO thin films grown on sapphire by pulsed laser deposition [J].

Jin, BJ ;

Im, S ;

Lee, SY .

THIN SOLID FILMS, 2000, 366 (1-2) :107-110

[9] A novel phenomenon: p-Type ZnO:Al films deposited on n-Si substrate [J].

Jin, Hu-Jie ;

Song, Min-Jong ;

Park, Choon-Bae .

PHYSICA B-CONDENSED MATTER, 2009, 404 (8-11) :1097-1101

[10] Fabrication and properties of ZnO:Cu and ZnO:Ag thin films [J].

Khomchenko, V. S. ;

Kryshtab, T. G. ;

Savin, A. K. ;

Zavyalova, L. V. ;

Roshchina, N. N. ;

Rodionov, V. E. ;

Lytvyn, O. S. ;

Kushnirenko, V. ;

Khachatryan, V. B. ;

Andraca-Adame, J. A. .

SUPERLATTICES AND MICROSTRUCTURES, 2007, 42 (1-6) :94-98

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