Reduction of Electron Overflow problem By Improved InGaN/GaN Based Multiple Quantum Well LEDs Structure With p- AlInGaN/AlGaN EBL Layer

InGaN/GaN-based Multi Quantum Well (MQVV) LEDS with p-AlInGaN/AlGaN electron blocking layers (EBL) are studied using the SimuLED simulator. The simulation results specify the importance of p-AlInGaN/AlGaN electron blocking layers to suppress the electron overflow problem in the InGaN based MQW LED device structure for the further improvement in the optical and electrical performance of the device. The designed AlInGaN/AlGaN EBL was investigated by changing different Al and In concentrations and was analyzed. It shows a reduction in electron overflow and subsequent increase in Internal Quantum Efficiency by insertion of AlxInyGa(1-x-)yNA-Al(0.15)GA(0.85)N (X=0.1, Y=0.15) EBL instead of conventional AlGaN EBL. Structure shows a significant reduction in efficiency droop and aiding a supportive barrier for electron overflow.