How to Make over 20% Efficient Perovskite Solar Cells in Regular (n-i-p) and Inverted (p-i-n) Architectures

被引:527
作者
Saliba, Michael [1 ]
Correa-Baena, Juan-Pablo [2 ]
Wolff, Christian M. [3 ]
Stolterfoht, Martin [3 ]
Phung, Nga [5 ]
Albrecht, Steve [4 ]
Neher, Dieter [3 ]
Abate, Antonio [5 ]
机构
[1] Adolphe Merkle Inst, Chemin Verdiers 4, CH-1700 Fribourg, Switzerland
[2] MIT, 77 Massachusetts Ave, Cambridge, MA 02139 USA
[3] Univ Potsdam, Inst Phys, Karl Liebknecht Str 24-25, D-14476 Potsdam, Germany
[4] Helmholtz Zentrum Berlin Mat & Energie, Young Investigator Grp Perovskite Tandem Solar Ce, Kekulestr 5, D-12489 Berlin, Germany
[5] Helmholtz Zentrum Berlin Mat & Energie, Young Investigator Grp Act Mat & Interfaces Stabl, Kekulestr 5, D-12489 Berlin, Germany
关键词
PERFORMANCE; PRECURSORS; EVOLUTION;
D O I
10.1021/acs.chemmater.8b00136
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Perovskite solar cells (PSCs) are currently one of the most promising photovoltaic technologies for highly efficient and cost-effective solar energy production. In only a few years, an unprecedented progression of preparation procedures and material compositions delivered lab-scale devices that have now reached record power conversion efficiencies (PCEs) higher than 20%, competing with most established solar cell materials such as silicon, CIGS, and CdTe. However, despite a large number of researchers currently involved in this topic, only a few groups in the world can reproduce >20% efficiencies on a regular n-i-p architecture. In this work, we present detailed protocols for preparing PSCs in regular (n-i-p) and inverted (p-i-n) architectures with >= 20% PCE. We aim to provide a comprehensive, reproducible description of our device fabrication , protocols. We encourage the practice of reporting detailed and transparent protocols that can be more easily reproduced by other laboratories. A better reporting standard may, in turn, accelerate the development of perovskite solar cells and related research fields.
引用
收藏
页码:4193 / 4201
页数:9
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