Single mode 1.3 μm InGaAsN/GaAs quantum well vertical cavity surface emitting lasers grown by molecular beam epitaxy

被引：10

作者：

Hsiao, RS

Wang, JS ^{[1
]}

Lin, KF

Wei, L

Liu, HY

Liang, CY

Lai, CM

Kovsh, AR

Maleev, NA

Chi, JY

Chen, JF

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[2] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan

[3] Ind Technol Res Inst, Hsinchu 310, Taiwan

[4] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 12A期

关键词：

InGaAsN/GaAs quantum wells; vertical cavity surface emitting lasers; molecular beam epitaxy;

D O I：

10.1143/JJAP.43.L1555

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth by molecular-beam-epitaxy of high-quality 1.3 mum InGaAsN/GaAs quantum wells (QW) intra-cavity contacted vertical cavity surface emitting lasers (VCSELs) was demonstrated. Low-temperature growth, which suppresses the phase separation significantly improves material quality in the active region. Room-temperature continuous wave (RT-CW) single mode output power of 0.75 mW with an initial slope efficiency of 0.17 W/A and a side mode suppression ratio of 40 dB at a lasing wavelength of as long as 1304 nm were obtained.

引用

收藏

页码：L1555 / L1557

页数：3

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