Study on chemical vapor deposited copper films on cyano and carboxylic self-assembled monolayer diffusion barriers

被引：10

作者：

Kong, Zhe ^{[1
]}

Wang, Qi ^{[1
]}

Ding, Liang ^{[1
]}

Wu, Tao ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Chem, Hangzhou 310027, Zhejiang, Peoples R China

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 17期

关键词：

Chemical vapor deposition (CVD); Copper films; Self-assembled monolayers; Cyano-terminated self-assembled monolayers; Carboxyl-terminated self-assembled monolayers; Diffusion barrier; Scanning electron microscopy; Atomic force microscopy; TERMINATED MOLECULAR NANOLAYERS; RAY PHOTOELECTRON-SPECTROSCOPY; TREATED SIO2 SURFACES; INTEGRATED-CIRCUITS; HYDROGEN-PEROXIDE; THIN-FILM; CU; INTERCONNECTS; METALLIZATION; ADHESION;

D O I：

10.1016/j.tsf.2010.02.016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin copper films were produced by chemical vapor deposition using the precursor Cu(II)bis-hexafluoroacetylacetonate on the SiO2/Si substrate modified with cyano and carboxylic self-assembled monolayers (SAMs) as diffusion barriers. The characterizations of the deposited copper films were measured by various thin film analysis techniques, i.e., scanning electron microscopy, atomic force microscopy. X-ray photoelectron spectroscopy and X-ray diffraction. The comparison between copper deposited on SiO2 and on the SAM-modified SiO2 substrates indicates that the copper films tend to be deposited onto the SAM-modified substrate, which is further proved by the calculation results of the interaction energies of copper and the SAMs with density functional theory method. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：4852 / 4859

页数：8

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