Double capped InAs Quantum Dots with strain compensation layer grown on InP/Si substrate

被引：0
|
作者：
Shirai, Takuto [1 ]
Han, Xu [2 ]
Ishizaki, Takahiro [2 ]
Tsushima, Koki [3 ]
Matsuura, Masaki [2 ]
Shibukawa, Kota [2 ]
Fujiwara, Keita [4 ]
Sato, Motonari [2 ]
Shimomura, Kazuhiko [2 ]
机构：
[1] Sophia Univ, Dept Engn & Appl Sci, Nagareyama, Japan
[2] Sophia Univ, Dept Engn & Appl Sci, Tokyo, Japan
[3] Sophia Univ, Dept Engn & Appl Sci, Yokohama, Kanagawa, Japan
[4] Sophia Univ, Dept Engn & Appl Sci, Kawasaki, Kanagawa, Japan
来源：
2020 OPTO-ELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2020) | 2020年
关键词：
InAs; quantum dot; InP/Si substrate; wafer bonding; MOVPE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have grown InAs quantum dots on InP and directly bonded InP/Si substrate using MOVPE where the strain of GaInAsP second cap layer were changed. We have investigated the density, size and optical characteristics dependent on difference of lattice mismatch of strain compensation layer.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Optical gain of multi-stacked InAs quantum dots grown on InP(311)B substrate by strain-compensation technique
    Takata, Ayami
    Akahane, Kouichi
    Yamamoto, Naokatsu
    Okada, Yoshitaka
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, 2011, 8 (02): : 254 - 256
  • [2] Optical properties of InAs quantum dots grown on InP (001) substrate by MOCVD
    Wang, B
    Chua, SJ
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 224 (01): : 73 - 77
  • [3] Current-injected light emission of epitaxially grown InAs/InP quantum dots on directly bonded InP/Si substrate
    Matsumoto, Keiichi
    Zhang, Xinxin
    Kishikawa, Junya
    Shimomura, Kazuhiko
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (03)
  • [4] InAlGaAs encapsulation of MOVPE-grown InAs quantum dots on InP(001) substrate
    Hasan, Samiul
    Han, Han
    Korytov, Maxim
    Pantouvaki, Marianna
    Van Campenhout, Joris
    Merckling, Clement
    Vandervorst, Wilfried
    JOURNAL OF CRYSTAL GROWTH, 2020, 531
  • [5] Comparison of InAs quantum dots grown on GaInAsP and InP
    Barik, S.
    Tan, H. H.
    Jagadish, C.
    NANOTECHNOLOGY, 2006, 17 (08) : 1867 - 1870
  • [6] Wide emission wavelength InAs/InP quantum dots grown by double-capped procedure using MOVPE selective area growth
    Akaishi, Masataka
    Okawa, Tatsuya
    Saito, Yasuhito
    Shimomura, Kazuhiko
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2008, 14 (04) : 1197 - 1203
  • [7] Strain effect on energy band of InAs/InP quantum dots by GaAs layer insertion
    Kim, JS
    Kim, EK
    Park, K
    Yoon, E
    COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS, 2005, 184 : 433 - 438
  • [8] Multi-exciton complexes in single InAs quantum dots grown on InP(001) substrate
    Chauvin, N
    Tranvouez, E
    Bremond, G
    Guillot, G
    Bru-Chevallier, C
    Dupay, E
    Regreny, P
    Gendry, M
    2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 2005, : 273 - 275
  • [9] Spontaneously ordered InAs self-assembled quantum dots grown on GaAs/InP substrate
    Wang, BZ
    Peng, YH
    Zhao, FH
    Chen, WY
    Liu, SY
    Gao, CX
    JOURNAL OF CRYSTAL GROWTH, 1998, 186 (1-2) : 43 - 47
  • [10] Reduction of Spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer
    Suzuki, Ryoichiro
    Miyamoto, Tomoyuki
    Koyama, Fumio
    2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4, 2007, : 252 - 253
12345